Martin Matas

postdoctoral research fellow
email: martin.matas@unileoben.ac.at

Short bio

2023–presentpostdoc in Computational Materials Science group, Department of Materials Science, Montanuniversität Leoben, Austria
2018–2023Ph.D. in Plasma physics and physics of thin films from University of West Bohemia, Plzeň, CZ
Thesis title: "Design of thin-film materials and explanation of their properties by atomic-level simulations"
2016–2018Ing. (M.Sc. equivalent) in Physical and Mathematical Modelling from University of West Bohemia, Plzeň, CZ
2013–2016Bc. (B.Sc. equivalent) in Applied and Engineering Physics from University of West Bohemia, Plzeň, CZ

Research interests

Publications

  1. U. Pototschnig, M. Matas, D. Scheiblehner, D. Neuschitzer, R. Obenaus-Emler, H. Antrekowitsch, D. Holec: "Predictive Model for Catalytic Methane Pyrolysis". J. Phys. Chem. C, 128(22), 9034–9040 (2024). DOI: 10.1021/acs.jpcc.4c01690

  2. M. Matas, J. Houska: "Magnetic ground state of holmium nitride". Computational Materials Science, 230, 112537 (2023). DOI: https://doi.org/10.1016/j.commatsci.2023.112537

  3. A. Farhadizadeh, J. Vlček, J. Houška, S. Haviar, R. Čerstvý, M. Červená, P. Zeman, M. Matas: "Effect of nitrogen content on high-temperature stability of hard and optically transparent amorphous Hf-Y-Si-B-C-N coatings". Ceramics International, 49(4), 6086-6093 (2023). DOI: https://doi.org/10.1016/j.ceramint.2022.10.250

  4. M. Matas, A. Farhadizadeh, J. Houska: "Vacancies and substitutional defects in multicomponent diboride Ti0.25Zr0.25Hf0.25Ta0.25B2: first-principle study". Journal of Physics: Condensed Matter, 34(9), 095901 (2021). DOI: 10.1088/1361-648X/ac3db4

  5. J. Čapek, Š. Batková, M. Matas, Š. Kos, T. Kozák, S. Haviar, J. Houška, J. Schusser, J. Minár, F. Dvořák, P. Zeman: "Bixbyite-Ta2N2O film prepared by HiPIMS and postdeposition annealing: Structure and properties". Journal of Vacuum Science & Technology A, 38(3), 033409 (2020). DOI: 10.1116/6.0000066

  6. M. Matas, M. Prochazka, J. Vlcek, J. Houska: "Dependence of characteristics of Hf(M)SiBCN (M = Y, Ho, Ta, Mo) thin films on the M choice: Ab-initio and experimental study". Acta Materialia, 206, 116628 (2021). DOI: https://doi.org/10.1016/j.actamat.2021.116628

  7. M. Matas, J. Houska: "Strong effect of the interaction potential cut-off on the crystallinity of films grown by simulations". Molecular Simulation, 43(17), 1436-1441 (2017). DOI: 10.1080/08927022.2017.1319056